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US 7,030,009 B2Granted
Method for forming metal interconnect in a carbon containing silicon oxide film
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorHiroshi Yuasa
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Abstract
An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.
Claims6
A method for forming a semiconductor device, comprising the steps of:
- a) forming an insulating film of a carbon-containing silicon oxide film over a substrate;
- b) etching the insulating film using a resist pattern as a mask, thereby forming an interconnect groove in the insulating film;
- c) filling the interconnect groove with a resist film;
- d) performing an etching process, thereby removing a first region of the resist film, existing outside the interconnect groove, and the resist, pattern,
- e) removing a second region of the resist film, still existing inside the interconnect groove,
- f) depositing a metal film on the interconnect groove,
- g) filling the interconnect grove with the metal, followed by removing metal film outside the interconnect and a surface film of the insulating film.
4 more elements
Dependencies are inferred from the claim text.