Techniques for patterning features in semiconductor devices
AssigneeInternational Business Machines Corporation
InventorsScott D. Allen, Katherina E. Babich, Steven J. Holmes, Arpan P. Mahorowala, Dirk Pfeiffer, Richard Stephan Wise
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Abstract
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
Claims26
A method for patterning one or more features in a semiconductor device, the method comprising the step of reducing at least one critical dimension of the one or more features during etching of an antireflective material.
A method for patterning one or more features in a semiconductor device, the method comprising the step of reducing one or more dimensions of the one or more features during etching of an antireflective material, wherein the one or more dimensions comprise the characteristic dimensions of the one or more features attained during patterning.
Dependencies are inferred from the claim text.