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US 7,030,003 B2Granted
Compound semiconductor device, production method thereof, light-emitting device and transistor
AssigneeShowa Denko K.K.
InventorTakashi Udagawa
Life of this patent
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Abstract
A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.
Claims2
A method for producing a semiconductor device comprising
- stacking a low-temperature buffer layer composed of a boron phosphide-base semiconductor layer, and
- stacking a boron phosphide-base semiconductor layer having a {110} crystal plane on a silicon single crystal substrate having a {111} crystal plane surface inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.
A method for producing a semiconductor device comprising
- stacking a low-temperature buffer layer composed of a boron phosphide-base semiconductor layer, and
- stacking a boron phosphide semiconductor layer having a {110} crystal plane on a silicon single crystal substrate having a {111} crystal plane surface inclined at an angle of 7.3±0.50° toward a <110° crystal azimuth.
Dependencies are inferred from the claim text.