Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
AssigneeNagoya University
InventorsAkira Sakai, Yukio Yasuda, Shigeaki Zaima, Mitsuo Sakashita, Hiroki Kondo, Shinsuke Sakashita
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Abstract
A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.
Claims20
A method for fabricating a metallic oxide film of high dielectric constant, comprising the steps of:
- epitaxially growing a given metallic oxide film on a substrate, and
- thermally treating said substrate and said metallic oxide film within a temperature range of from 900° C. to 1000° C. to mix constituent elements of said substrate with constituent metallic oxide elements of said metallic oxide film throughout said metallic oxide film to form said metallic oxide film of high dielectric constant on said substrate.
A metallic oxide film of high dielectric constant comprising constituent elements mixed with constituent elements of a substrate and constituent elements of a given metallic oxide film which is epitaxially grown on said substrate, wherein said metallic oxide film is minutely polycrystal or amorphous.
Dependencies are inferred from the claim text.