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US 7,029,995 B2Granted
Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy
AssigneeASM America, Inc.
InventorsMichael A. Todd, Paul D. Brabant, Keith D. Weeks, Jianqing Wen
Life of this patent
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Abstract
Methods for forming epitaxial films involve forming a buffer layer on a single crystal substrate, depositing an amorphous layer on the buffer layer, then forming an epitaxial film from the amorphous layer by solid phase epitaxy.
Claims36
A method for making an epitaxial film, comprising:
- providing a single crystal substrate;
- forming an amorphous buffer layer on the single crystal substrate, the amorphous buffer layer comprising an element selected from the group consisting of boron, nitrogen, chlorine, fluorine, indium, phosphorous, arsenic and antimony;
- depositing an amorphous silicon-containing layer on the amorphous buffer layer;
- and
- crystallizing the amorphous silicon-containing layer to thereby form an epitaxial film.
2 more elements
A method for making an epitaxial film, comprising:
- providing a single crystal substrate;
- oxidizing a surface of the single crystal substrate to form a surface oxide;
- reducing a portion of the surface oxide to form an oxide buffer layer;
- depositing an amorphous silicon-containing layer on the oxide buffer layer;
- and
- crystallizing the amorphous silicon-containing layer to thereby form an epitaxial film.
3 more elements
Dependencies are inferred from the claim text.