Strained channel on insulator device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Hu Ge, Chao-Hsiung Wang, Chien-Chao Huang, Wen-Chin Lee, Chenming Hu
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Abstract
A semiconductor device 10 includes a substrate 12 (e.g., a silicon substrate) with an insulating layer 14 (e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer 16 (e.g., SiGe) is disposed on the insulating layer 14 and a second semiconducting material layer 18 (e.g., Si) is disposed on the first semiconducting material layer 16. The first and second semiconducting material layers 16 and 18 preferably have different lattice constants such that the first semiconducting material layer 16 is compressive and the second semiconducting material layer is tensile 18.
Claims24
A method of making an electron device, the method comprising:
- providing a semiconductor-on-insulator (SOI) substrate having a silicon layer overlying an insulating layer, the insulating layer disposed on a substrate;
- forming a first epitaxial Si1-xGex layer over the SOI substrate;
- oxidizing the Si1-xGex layer so that Ge atoms are driven from an upper surface of the Si1-xGex layer into a remaining portion of the Si1-xGex layer and the silicon layer of the SOI substrate thereby forming a relaxed Si1-yGey layer, wherein y is greater than x;
- removing an oxide layer formed during the oxidizing;
- and
- forming a second silicon layer over the Si1-yGey layer.
A method of forming a semiconductor device, the method comprising:
- providing a substrate with an insulating layer disposed on a surface thereof;
- forming a first semiconducting material layer over the insulating layer, the first semiconducting material having a compressive stress;
- a forming a second semiconducting material layer over the first semiconducting material layer, the second semiconducting material having a tensile stress;
- and
- forming a p-channel transistor having a channel in a first portion of the second semiconducting material layer and forming an n-channel transistor having a channel in a second portion of the second semiconducting material layer.
A method of forming a semiconductor device, the method comprising:
- providing a substrate with an insulating layer disposed on a surface thereof;
- forming a first semiconducting material layer on the insulating layer, the first semiconducting material having a compressive stress;
- and
- a forming a second semiconducting material layer on the first semiconducting material layer, the second semiconducting material baying a tensile stress;
- wherein forming a first semiconducting material layer comprises forming a Si1-yGey layer and wherein forming a second semiconducting material layer comprises forming a silicon layer;
- and
- wherein the first semiconducting material layer is deposited on a lower silicon layer, the lower silicon layer overlying the insulating layer.
Dependencies are inferred from the claim text.