Method for treating substrates for microelectronics and substrates obtained according to said method
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsThierry Barge, André Auberton-Herve, Hiroji Aga, Naoto Tate
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Abstract
The invention relates to a method for treating substrates (50) for microelectronics or optoelectronics, whereby said substrates comprise a useful layer (52) on at least one of the surfaces thereof. The inventive method includes a mechanical/chemical polishing step occurring on a bare surface (54) of the useful layer and is characterized in that it also comprises a post-curing step in a reductive atmosphere (100) before said polishing step occurs.
Claims22
A process for treating microelectronic or optoelectronic substrates that have a working layer with a free surface thereof, which process comprises:
- oxidizing the working layer to provide at least a portion of the free surface as an oxide;
- removing a portion of said oxide;
- and
- after the portion of said oxide is removed, annealing the substrate under a reductive atmosphere to assist in smoothing of the free surface and then chemical mechanical polishing the free surface to prepare it for further processing, wherein chemical mechanical polishing removes about 200 Å to about 400 Å of the substrate.
A process for treating microelectronic or optoelectronic substrates that have a working layer with a free surface thereof, which process comprises annealing the substrate under a reductive atmosphere that includes hydrogen for less than 3 minutes at a temperate between 1100 and 1300° C. to assist in smoothing of the free surface, followed by chemical mechanical polishing of the free Surface to provide it with a final rms roughness of between 0.8 and 1.5 angstroms measured during scanning of a 1×1 μm area so that it is ready for further processing.
Dependencies are inferred from the claim text.