Semiconductor device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsNam Sik Kim, Joo Han Shin
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Abstract
The present invention relates to a semiconductor device and a method of manufacturing the same. The minimum marginal width of an impurity diffusion layer is defined to reduce by a given width. The reduced width of the impurity diffusion layer is compensated for through a silicon growth layer formed on the top of a device isolation film having a relatively higher degree of freedom than the bottom of the device isolation film. Thus, the degree of integration in the semiconductor device can be improved while keeping intact the minimum marginal width of the impurity diffusion layer.
Claims7
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a pad nitride film on a semiconductor substrate;
- (b) etching a portion of the pad nitride film and the semiconductor substrate to form a trench;
- (c) depositing a first insulating film on the entire structure so that the trench is buried;
- (d) polishing the first insulating film so that the pad nitride film is exposed;
- (e) wet etching the first insulating film so that the semiconductor substrate at both sidewalls of the trench is exposed;
- (f) performing a SEG process at the condition that the pad nitride film is formed on the semiconductor substrate for only the semiconductor substrate exposed at both sidewalls of the trench to form a silicon growth layer on each sidewall;
- (g) forming a second insulating film on the first insulating film so that the trench is buried;
- and
- (h) removing the pad nitride film.
Dependencies are inferred from the claim text.