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US 7,029,982 B1Granted
Method of affecting RRAM characteristics by doping PCMO thin films
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, David R. Evans, Fengyan Zhang, Sheng Teng Hsu
Life of this patent
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Abstract
A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer.
Claims10
A method of fabricating a doped-PCMO thin film layer comprising:
- preparing a PCMO precursor solution, including:
- dehydrating Ca(OAc)2(H2O) and Mn(OAc)3(2H2O);
- mixing Pr(OAc)3(H2O), Ca(OAc)2(H2O) and Mn(OAc)3(2H2O);
- adding a transition metal additive to the PCMO precursor solution;
- dissolving the PCMO chemicals and transition metal additive in an organic solvent;
- heating the doped-PCMO precursor solution at between about 90° to 120° for between about one hour to eight hours;
- filtering the doped-PCMO through a 0.2 μm filter;
- thereby forming doped-PCMO spin-coating solution;
- spin-coating the doped-PCMO spin-coating solution onto a wafer by:
- injecting the doped-PCMO spin-coating solution onto a wafer surface;
- spinning the wafer at about 2500 RPM for about 45 seconds;
- baking the coated wafer at about 180° for about one minute;
- ramping the baking temperature up to about 230°, and baking for about one minute;
- annealing the wafer in a RTA furnace at about 500° for about five minutes;
- repeating the spin-coating process at least three times to fabricate a doped-PCMO layer;
- and
- annealing the wafer at between about 500° to 600° for between about one hour to six hours in dry, clean air.
14 more elements
A method of fabricating a doped-PCMO thin film layer comprising:
- preparing a PCMO precursor solution, including:
- dehydrating Ca(OAc)2(H2O) and Mn(OAc)3(2H2O);
- mixing Pr(OAc)3(H2O), Ca(OAc)2(H2O) and Mn(OAc)3(2H2O);
- adding a transition metal additive to the PCMO precursor solution, including selecting a transition metal additive from the group of transition metal additives consisting of V, Cr, Co, Fe, Ni, Ti, Zr, Hf, Nb, Ta, Mo W and Zn;
- dissolving the PCMO chemicals and transition metal additive in an organic solvent;
- heating the doped-PCMO precursor solution at between about 90° to 120° for between about one hour to eight hours;
- filtering the doped-PCMO through a 0.2 μm filter;
- thereby forming doped-PCMO spin-coating solution;
- spin-coating the doped-PCMO spin-coating solution onto a wafer by:
- injecting the doped-PCMO spin-coating solution onto a wafer surface;
- spinning the wafer at about 2500 RPM for about 45 seconds;
- baking the coated wafer at about 180° for about one minute;
- ramping the baking temperature up to about 230°, and baking for about one minute;
- annealing the wafer in a RTA furnace at about 500° for about five minutes;
- repeating the spin-coating process at least three times to fabricate a doped-PCMO layer;
- and
- annealing the wafer at between about 500° to 600° for between about one hour to six hours in dry, clean air.
14 more elements
A method of fabricating a doped-PCMO thin film layer comprising:
- preparing a PCMO precursor solution, including:
- dehydrating Ca(OAc)2(H2O) and Mn(OAc)3(2H2O);
- mixing Pr(OAc)3(H2O), Ca(OAc)2(H2O) and Mn(OAc)3(2H2O);
- adding a transition metal additive to the PCMO precursor solution, including selecting a transition metal additive from the group of transition metal additives consisting of V and Cr;
- dissolving the PCMO chemicals and transition metal additive in an organic solvent;
- heating the doped-PCMO precursor solution at between about 90° to 120° for between about one hour to eight hours;
- filtering the doped-PCMO through a 0.2 μm filter;
- thereby forming doped-PCMO spin-coating solution;
- spin-coating the doped-PCMO spin-coating solution onto a wafer by:
- injecting the doped-PCMO spin-coating solution onto a wafer surface;
- spinning the wafer at about 2500 RPM for about 45 seconds;
- baking the coated wafer at about 180° for about one minute;
- ramping the baking temperature up to about 230°, and baking for about one minute;
- annealing the wafer in a RTA furnace at about 500° for about five minutes;
- repeating the spin-coating process at least three times to fabricate a doped-PCMO layer;
- and
- annealing the wafer at between about 500° to 600° for between about one hour to six hours in dry, clean air.
14 more elements
Dependencies are inferred from the claim text.