Method of manufacturing a metal-insulator-metal capacitor

A method of manufacturing an integrated circuit comprising:

• forming transistors over a semiconductor substrate in a transistor region;
• forming a first refractory metal layer over said transistor region and a capacitor region;
• forming at least one metal insulator metal (MIM) capacitor over said semiconductor substrate in a capacitor region, including:
• removing said first refractory metal layer in said capacitor region;
• depositing a second refractory metal layer over said capacitor region;
• and
• reacting said second refractory metal layer with at least a portion of a silicon layer in said capacitor region to form a silicided refractory metal layer;
• and
• forming interconnections on insulating layers located over said transistor and said MIM capacitor to thereby interconnect said MIM capacitor and said transistors to form an operative active device.