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US 7,029,971 B2Granted
Thin film dielectrics for capacitors and methods of making thereof
AssigneesE. I. Du Pont de Nemours and Company, Norch Carolina State University
InventorsWilliam J. Borland, Jon Fredrick Ihlefeld, Angus Ian Kingon, Jon-Paul Maria
Life of this patent
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Abstract
Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.
Claims28
A method of making a capacitor, comprising:
- providing a bare metallic foil;
- forming a dielectric over the bare metallic foil, wherein forming the dielectric comprises:
- forming a dielectric layer over the foil;
- annealing the dielectric layer, wherein annealing comprises:
- annealing at a temperature in the range of about 800–1050° C. and annealing comprises
- annealing in an environment having an oxygen partial pressure of less than about 10−8 atmospheres;
- re-oxygenating the dielectric resulting from the annealing;
- and
- forming a conductive layer over the dielectric, wherein the metallic foil, the dielectric, and the conductive layer form the capacitor.
6 more elements
A method of making a capacitor, comprising:
- providing a metallic foil;
- forming a dielectric over the metallic foil, wherein forming a dielectric comprises:
- annealing at a temperature of greater than about 800° C. in an environment having an oxygen partial pressure of less than about 10−8 atmospheres;
- re-oxygenating the dielectric;
- and
- forming a conductive layer over the dielectric, wherein the metallic foil, the dielectric, and the conductive layer form the capacitor.
3 more elements
A method of making a capacitor, comprising:
- providing a bare copper foil that has not been treated with organic additives;
- forming a dielectric having a thickness in the range of about 0.2–2.0 microns over the copper foil, wherein forming a dielectric comprises:
- annealing at a temperature in the range of about 800–1050° C. in an environment having an oxygen partial pressure of less than about 10−8 atmospheres, wherein the dielectric comprises at least one of barium titanate and barium strontium titanate;
- re-oxygenating the dielectric at a temperature in the range of about 450–700° C.;
- and
- forming a conductive layer over the dielectric, wherein the metallic foil, the dielectric, and the conductive layer form a capacitor.
3 more elements
A method of making a capacitor, comprising:
- providing a bare metallic foil;
- forming a dielectric over the bare metallic foil, wherein forming the dielectric comprises:
- forming a dielectric layer over the foil;
- annealing the dielectric layer;
- re-oxygenating the dielectric resulting from the annealing;
- and
- forming a conductive layer over the dielectric, wherein the metallic foil, the dielectric, and the conductive layer form the capacitor
- wherein the dielectric layer is applied to a first side of the foil, the method comprising:
- forming a second dielectric layer on a second side of the foil opposite to the first side.
6 more elements
Dependencies are inferred from the claim text.