Method of manufacturing semiconductor device having thin film SOI structure
AssigneeOki Electric Industry Co., Ltd.
InventorNaokatsu Ikegami
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes the steps of, (1) preparing an SOI substrate, (2) forming a metal layer on the SOI substrate, (3) performing a first anneal treatment to the metal layer at a relatively low temperature in order to transform the metal layer to a first silicide layer, (4) forming an insulating layer on the first silicide layer, and (5) forming a contact hole, which reaches the first silicide layer, in the insulating layer; and (6) performing a second anneal treatment to the silicide layer at a relatively high temperature in order to transform the first silicide layer to a second silicide layer.
Claims12
A method of manufacturing a semiconductor device, comprising:
- preparing an SOI substrate;
- forming a metal layer on the SOI substrate;
- annealing the metal layer at a first temperature, which is effective in converting the metal layer into a first silicide layer;
- forming an insulating layer on the first silicide layer;
- and
- forming a hole from a surface of the insulating layer until a part of the first silicide layer is exposed;
- and
- annealing the first silicide layer at a second temperature, which is effective in converting the first silicide layer into a second silicide layer by a rapid thermal annealing process wherein the second temperature is higher than the first temperature.
Dependencies are inferred from the claim text.