Memory system capable of operating at high temperatures and method for fabricating the same
AssigneeInternational Business Machines Corporation
InventorsLouis L. Hsu, Li-Kong Wang
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Abstract
A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each transfer gate within the T-RAM array to provide a planar cell structure for the T-RAM array. A method is also presented for fabricating the T-RAM array having the vertical thyristors, the vertical transfer gates and the planar cell structure over the SiC substrate.
Claims19
A method for fabricating a memory array having a plurality of thyristor based random access memory (T-RAM) memory cells, the method comprising the steps of:
- providing a wafer having at least one silicon carbide (SiC) layer;
- and
- fabricating each of the plurality of T-RAM memory cells over the at least one SiC layer,
- wherein each of the plurality of T-RAM memory cells includes a first vertical device and a second vertical device, said first vertical device and said second vertical device being approximately the same height and current flow through said first vertical device and said second vertical device is predominately in a vertical direction.
Dependencies are inferred from the claim text.