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US 7,029,950 B2Granted
Thin-film semiconductor device and method of manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorsTakao Yonehara, Kiyofumi Sakaguchi
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Abstract
A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.
Claims12
A method of manufacturing a thin-film semiconductor device, comprising:
- a step of preparing a member having (a) a semiconductor film with a semiconductor element and/or semiconductor integrated circuit and (b) a separation layer on which the semiconductor film is disposed;
- a bonding step of bonding the member to a support member;
- a separation step of, after the bonding step, separating the member at the separation layer;
- a chip forming step of, after the bonding step, forming the semiconductor film into a plurality of chips;
- a packaging step of mounting a chip of the plurality of chips on a package board;
- and
- a removing step of, after the separation step, removing the support member.
4 more elements
Dependencies are inferred from the claim text.