Organic field effect transistor with an organic dielectric
AssigneeMerck Patent GmbH
InventorsJanos Veres, Simon Dominic Ogier, Soad Mohialdin-Khaffaf, Stephen William Leeming
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Abstract
A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.
Claims35
A process of manufacturing an organic field effect device comprising the steps of
- a) depositing from a solution an organic semiconductor layer;
- and
- b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0 with the proviso that the low permittivity insulating material is not benzocyclobutene (BCB).
Dependencies are inferred from the claim text.