Method for fabricating complementary metal oxide semiconductor image sensor
AssigneeMagnaChip Semiconductor, Ltd.
InventorWon-Ho Lee
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Abstract
The present invention relates to a method for fabricating a complementary metal oxide semiconductor (CMOS) image sensor. The method includes the step of: (a) forming a substrate of a first conductive type defined with a photodiode region and a native second conductive channel transistor region; and (b) forming a first conductive type impurity region by performing an ion-implantation process for forming a second conductive type channel stop region with a first conductive impurity ion, wherein the first conductive type impurity region is extended to the native second conductive type channel transistor region.
Claims10
A method for fabricating a complementary metal oxide semiconductor (CMOS) image sensor, comprising:
- forming a substrate of a first conductive type defined with a photodiode region and a native second conductive channel transistor region;
- and
- forming a first conductive type impurity region by performing an ion-implantation process for forming a second conductive type channel stop region with a first conductive impurity ion, wherein the first conductive type impurity region is extended to a photodiode region and the native second conductive type channel transistor region.
Dependencies are inferred from the claim text.