Semiconductor laser, device having reduced contact resistance and manufacturing method thereof

A semiconductor laser element manufacturing method, comprising:

• (a) a step of forming a plurality of semiconductor layers on a semiconductor substrate;
• (b) a step of forming a first semiconductor layer over the plurality of semiconductor layers;
• (c) a step of forming a contact layer including a second semiconductor layer over the plurality of semiconductor layers;
• (d) a step of selectively removing a portion of the contact layer to form a contact portion;
• (e) a step of selectively removing a portion of the first semiconductor layer to form a ridge including said contact portion and a remaining portion of the first semiconductor layer beneath said contact portion, with an upper surface of said contact portion having a first direction width greater than a first direction width of said remaining portion of the first semiconductor layer
• (f) a step of forming an insulating film over said semiconductor substrate so as to cover an upper surface and sidewalls of said ridge;
• and
• (g) a step of removing the insulating film across a first direction width of the upper surface of said ridge such that the sidewalls of said ridge remain substantially covered by the insulating film.