Double density MRAM with planar processing
AssigneeMicron Technology, Inc.
InventorsAllan T. Hurst, Jeffrey Sather, Jason B. Gadbois
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Abstract
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
Claims14
A method of forming a magnetic memory device on a substrate, the method comprising:
- forming a first and second electrode on the substrate;
- forming a first magnetic memory component on the first and second electrode in a manner so as to be electrically coupled therewith;
- forming a first insulation layer on the substrate in a manner so as to overlie the first magnetic memory component and the first and second electrode;
- forming a word line on the first insulation layer;
- forming a second insulating layer on the first insulating layer in a manner so as to overlie the word line;
- forming a third and fourth electrode on the second insulating layer;
- forming a second magnetic memory component on the third and fourth electrode in a manner so as to be electrically coupled therewith, and wherein forming the second magnetic component increases the storage and fabrication density of the memory device;
- and
- forming a third insulating layer on the second insulating layer in a manner so as to overlie the second magnetic memory component and the third and fourth electrodes.
A method of increasing the density of a magnetic memory device having a substrate, the method comprising:
- forming a first memory layer on the substrate, wherein the first memory component comprises at least one magnetic storage component and a plurality of electrodes electrically coupled therewith;
- forming a word line on the first memory layer;
- and
- forming second memory layer above the word line, wherein the second memory layer comprises at least one magnetic storage component and a plurality of electrodes electrically coupled therewith, and wherein forming the second memory layer increases the fabrication density of the magnetic memory device.
Dependencies are inferred from the claim text.