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US 7,029,923 B2Granted
Method for manufacture of magneto-resistive bit structure
AssigneeMicron Technology, Inc.
InventorsHarry Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti, Yong Lu, Anthony Arrott
Life of this patent
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Abstract
A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
Claims21
A method for forming an integrated circuit, comprising:
- forming a magneto-resistive bit having an elongated central section and a first bit end, the first bit end having a perimeter and a width, the elongated central section having a width, the width of the first bit end being greater than the width of the elongated central section;
- forming a dielectric layer adjacent to the first bit end;
- and
- selectively removing a portion of the dielectric layer to form a hole, the hole having a perimeter and extending down to the magneto-resistive bit structure, wherein the hole is dimensioned such that the perimeter of the hole is spaced laterally inward of a perimeter of the first bit end.
1 more element
Dependencies are inferred from the claim text.