Method to restore hydrophobicity in dielectric films and materials
AssigneeHoneywell International Inc.
InventorsNigel P. Hacker, Michael Thomas, James S. Drage
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Abstract
Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
Claims16
A method of imparting hydrophobic properties to a damaged silica dielectric film present on a substrate, wherein said dielectric film has been contacted with at least one etchant or ashing reagent in such a way as to substantially damage or remove previously existing hydrophobicity of said dielectric film, the method comprising
- (a) contacting the damaged silica dielectric film with a surface modification composition at a concentration and for a time period effective to render the silica dielectric film hydrophobic;
- and
- (b) removing unreacted surface modification composition, reaction products and mixtures thereof,
- wherein the surface modification composition comprises at least one surface modification agent suitable for removing silanol moieties from the damaged silica dielectric film.
Dependencies are inferred from the claim text.