US 7,029,723 B2Granted

Forming chemical vapor depositable low dielectric constant layers

AssigneeIntel Corporation

InventorsTian-An Chen, Robert Meagley, Kevin P. O'Brien, Michael D. Goodner, James Powers

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Abstract

Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

Claims5

Dependent claims

A method comprising:

forming a dielectric film on a semiconductor substrate by chemical vapor deposition wherein said film includes silane linked carborane linked to a constituent selected from the group consisting of tetraethyl, methyl, propyl, butyl, and orthosilicate.

Dependencies are inferred from the claim text.

Facts

Application: 10/337,524Filed 7 Jan 2003
Published: US 2004/0130031 A18 Jul 2004
Granted: 18 Apr 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
C23C 16/30
Characterised by the deposition of inorganic material, other than metallic material: deposition of compounds, mixtures or solid solutions, e.g.…
H10P 14/668
Characterised by the type of materials: the materials being characterised by the deposition precursor materials
H10P 14/6682
The precursor containing a compound comprising Si: the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Family

US 2004/0130031 A1Pre-grant publication · published 8 Jul 2004
US 7,029,723 B2This patent

From the US filing history. Foreign family members aren’t listed.

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