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US 7,029,644 B2Granted
Method for producing a polycrystalline silicon, polycrystalline silicon and solar cell
AssigneesNational University Corporation, Tokyo University of Agriculture and Technology
InventorTadashi Saito
Life of this patent
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Abstract
Silicon raw material and gallium dopant are charged and mixed in a crucible. The silicon raw material is heated to a predetermined temperature, and melted under an inactive gas atmosphere. The melted silicon raw material is cooled down to be crystallized to make a polycrystalline silicon incorporating the gallium dopant.
Claims4
Polycrystalline silicon comprising gallium dopant and oxygen with a content of 1016−1018/cm, wherein the gallium dopant is substantially uniformly dispersed throughout said polycrystalline silicon.
Dependencies are inferred from the claim text.