Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsSei Tsunoda, Hideharu Nobutoki, Noboru Mikami
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Abstract
There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
Claims7
A semiconductor device comprising an insulation film between semiconductor layers, the said insulation film, comprising borazine moieties shown by the following formula (1), (2), or (3) as part of an inorganic or organic material molecule, wherein said film has a dielectric constant of at most 2.4 and a thermal resistance of at least 450° C.
A film comprising a material having the following formula (18):
- wherein n is an integer, and having a gold electrode deposited thereon, wherein said material may be partially crosslinked.
A film comprising poly(aminoborazinyl) having a gold electrode deposited thereon, wherein the poly(aminoborazinyl) is partially crosslinked.
A film comprising poly(B-vinylborazine), and having a gold electrode deposited thereon, wherein the poly(B-vinylborazine) is partially crosslinked.
A film comprising a poly(styrene-co-B-vinylborazine), and having a gold electrode deposited thereon, wherein the poly(styrene-co-B-vinylborazine) is partially crosslinked.
Dependencies are inferred from the claim text.