Plasma processing method
AssigneeHitachi High-Technologies Corporation
InventorsNaoki Yasui, Masahiro Sumiya, Hitoshi Tamura, Seiichi Watanabe
Life of this patent
Estimating the term…
Abstract
A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
Claims12
A plasma processing method for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, comprising a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- and a plasma generating means for generating plasma within the vacuum processing chamber;
- wherein
- the plasma processing method flattens a voltage waveform of a high frequency voltage supplied by the wafer bias power generator to a voltage that varies in an inclined manner with time and flattens either a positive side voltage or a negative side voltage of the voltage waveform at an arbitrary voltage.
A plasma processing method for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, comprising a vacuum processing chamber;
- a process gas feeding device for feeding process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- and a plasma generating means for generating plasma within the vacuum processing chamber;
- wherein
- the plasma processing method clips at least either a positive side voltage or a negative side voltage of a high frequency voltage of the wafer bias power generator to a predetermined voltage by flattening the high frequency voltage supplied by the wafer bias power generator to a voltage that varies in an inclined manner with time using a clip circuit connected to the wafer bias power generator.
A plasma processing method for providing a plasma processing to an object to be processed disposed within a vacuum processing chamber, comprising a vacuum processing chamber;
- a process gas feeding device for applying process gas into the vacuum processing chamber;
- a wafer electrode placed within the vacuum processing chamber for mounting the object to be processed;
- a wafer bias power generator for applying self-bias voltage to the wafer electrode;
- and a plasma generating means for generating plasma within the vacuum processing chamber;
- wherein
- the plasma processing method clips at least either a positive side voltage or a negative side voltage of a high frequency voltage of the wafer bias power generator to a voltage that varies in an inclined manner with time by using means for flattening the high frequency voltage which includes a clip circuit connected to the wafer bias power generator.
A plasma processing method utilizing a plasma processing apparatus comprising a processing chamber to which is connected an evacuator for depressurizing the interior of the processing chamber;
- a plasma generating means for generating plasma within the processing chamber;
- a means for applying high frequency voltage to an object to be processed;
- and a gas feeding device for feeding gas into the processing chamber;
- wherein
- the plasma processing method flattens a rectangular voltage waveform of a high frequency voltage to a voltage that varies in an inclined manner with time for at least one of a positive side voltage and a negative side voltage and applies the high frequency voltage with a predetermined duty ratio to the object to be processed so that a high frequency voltage waveform generated at the object is substantially rectangular.
Dependencies are inferred from the claim text.