Planarization with reduced dishing

A method of forming a planarized copper layer on a substrate, the method comprising the steps of:

• sputter cleaning the substrate using at least one of argon, hydrogen, and a fluorinated hydrocarbon, so as to remove about fifty angstroms of native oxide,
• depositing a barrier layer of at least one of tantalum nitride, tantalum, titanium nitride, and magnesium,
• depositing a seed layer of copper,
• forming the copper layer using an electroplating process, the copper layer having a surface with relatively high portions and relatively low portions,
• forming a resistive mask of photoresist over the relatively low portions of the copper layer and not over the relatively high portions of the copper layer,
• etching the surface of the copper layer with an electropolishing process, where the relatively high portions of the copper layer are exposed to the etch and the relatively low portions of the layer underlying the resistive mask are not exposed to the etch,
• continuing the electropolishing etch of the surface of the copper layer until the relatively high portions of the copper layer are at substantially a same level as the relatively low portions of the copper layer, thereby providing an initial planarization of the surface of the copper layer,
• removing the resistive mask from the surface of the copper layer, and
• planarizing all of the surface of the copper layer with the electropolishing process to provide a planarized copper layer.