CMP slurry composition and a method for planarizing semiconductor device using the same
AssigneeDongbuAnam Semiconductor Inc.
InventorsSang-Yong Kim, Kwang-Ha Suh, Tae-Kyu Kim, Hwi-Jin Kim
Life of this patent
Estimating the term…
Abstract
The present invention relates to a CMP (chemical mechanical polishing) slurry composition and a method for planarizing a semiconductor device. The CMP composition comprises fumed silica, tetramethyl ammonium hydroxide, phosphates, fluorine compounds and deionized water. The method of planarizing comprises the steps of etching, subsequently laminating and polishing a semiconductor device by said CMP slurry composition.
Claims19
A CMP (chemical mechanical polishing) composition comprising;
- (a) fumed silica;
- (b) TMAH (tetra methyl ammonium hydroxide);
- (c) phosphate anionic additives selected from the group consisting of phosphate esters, polyphosphate esters, and phosphate anionic additives containing a fluorocarbon group;
- (d) fluorine compounds;
- and
- (e) deionized water.
A method for planarizing a semiconductor device, comprising etching an oxide film and a nitride film of the semiconductor device, on which the nitride film and the oxide film are sequentially laminated, to chemically and mechanically polish the oxide film and the nitride film, using a CMP slurry composition comprising fumed silica, TMAH (tetramethyl ammonium hydroxide), phosphate anionic additives, fluorine compounds, and deionized water, wherein the phosphate anionic additives are selected from the group consisting of phosphate esters, polyphosphate esters, and phosphate anionic additives containing a fluorocarbon group.
Dependencies are inferred from the claim text.