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US 7,023,896 B2Granted
VCSEL structure insensitive to mobile hydrogen
AssigneeFinisar Corporation
InventorRalph H. Johnson
Life of this patent
Estimating the term…
Abstract
An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.
Claims21
A vertical cavity surface emitting laser structure comprising:
- a first mirror;
- a second mirror;
- an active region situated between the first mirror and the second mirror;
- a first spacer situated between the first mirror and the active region;
- a second spacer situated between the second mirror and the active region;
- and
- wherein at least a first portion of the first spacer adjacent to the active region has a first doping level, and at least a first portion of the second spacer adjacent to the active region has a second doping level, wherein the first doping level is greater than the second doping level;
- and
- the second spacer includes a second portion that is further away from the active region than the first portion of the second spacer, the second portion of the second spacer being more heavily doped than the first portion of the second spacer.
6 more elements
An optoelectronic device comprising:
- a first mirror;
- a second mirror;
- an active region situated between said first and second mirrors;
- a first region adjacent to a first side of the active region, the first region being doped;
- a second region adjacent to a second side of the active region, the second region being undoped;
- and
- a third region adjacent to the second region, but not in between the first region and the second region, that includes a dopant of a first type.
4 more elements
An optoelectronic device comprising:
- a lower mirror;
- an upper mirror;
- an active region situated between said lower and said upper mirror;
- a moderately or heavily doped region adjacent the upper side of the active region;
- an undoped region adjacent the lower side of the active region;
- and
- a moderately or heavily doped region adjacent the lower side of the undoped region.
4 more elements
An optoelectronic device comprising:
- a first mirror;
- a second mirror;
- an active region situated between said first and second mirrors, the active region having active energy bands;
- the optoelectronic device having a doping profile, wherein the doping profile includes a first moderately or heavily doped region adjacent to a first side of the active region;
- a low or undoped region adjacent to a second side of the active region;
- and a second moderately or heavily doped region adjacent to the low or undoped region, but not in between the first moderately or heavily doped region and the low or undoped region.
3 more elements
Dependencies are inferred from the claim text.