Magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Saito, Tomomasa Ueda, Tatsuya Kishi, Minoru Amano
Life of this patent
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Abstract
There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.
Claims40
A magnetic memory comprising:
- at least one wire;
- a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire;
- and
- first yokes which are provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element, each of the first yokes having at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
A magnetic memory comprising:
- at least one wire;
- and
- a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire;
- and
- a yoke which is provided at least on both side faces of the wire, the yoke having at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
A magnetic memory comprising:
- at least one wire;
- a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire;
- and
- a yoke which is provided on both side faces of the wire and on an opposite face of the wire to the magnetoresistive effect element, the yoke having at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
A magnetic memory comprising:
- at least one wire;
- a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire;
- a first yoke provided on both side faces of the wire and having two first soft magnetic layers and a non-magnetic layer interposed therebetween;
- and
- a second yoke provided on an opposite face of the wire to the magnetoresistive effect element and having a second soft magnetic layer.
Dependencies are inferred from the claim text.