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US 7,023,720 B2Granted
Ferroelectric memory device
AssigneeSeiko Epson Corporation
InventorAkira Maruyama
Life of this patent
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Abstract
A ferroelectric memory device having a function of preventing destruction of data stored in an unselected memory cell. The ferroelectric memory device includes a protection circuit for protecting data in the unselected memory cell. The protection circuit is provided on an unselected-bitline-voltage supply line and an unselected-wordline-voltage supply line.
Claims12
A ferroelectric memory device comprising:
- a plurality of wordlines disposed in parallel;
- a plurality of bitlines disposed in parallel so as to intersect the wordlines;
- a plurality of ferroelectric memory cells respectively disposed at intersections between the wordlines and the bitlines;
- a wordline driver section which drives the wordlines;
- a bitline driver section which drives the bitlines;
- a power supply circuit which generates two or more types of voltages;
- a plurality of voltage supply lines which supply the two or more types of voltages to the wordline driver section and the bitline driver section, from the power supply circuit;
- and
- a protection circuit which is provided on the voltage supply lines and protects an unselected memory cell in the ferroelectric memory cells from an overvoltage exceeding a predetermined voltage.
6 more elements
Dependencies are inferred from the claim text.