Semiconductor device and manufacturing the same

A semiconductor device having a power amplification circuit with a first operating frequency, a power amplification circuit with a second operating frequency and a control circuit, comprising:

• a wiring substrate having a main surface and a back surface opposite to the main substrate;
• a first semiconductor chip mounted over the main surface of the wiring substrate;
• a second semiconductor chip mounted over the back surface of the wiring substrate;
• a third semiconductor chip mounted over the back surface of the wiring substrate;
• a passive element mounted over the main surface of the wiring substrate;
• a plurality of external terminals provided over the back surface of the wiring substrate;
• and
• a sealing portion covering the first semiconductor chip and passive element;
• wherein the control circuit controls the power amplification circuits with the first and second operating frequencies;
• each of the power amplification circuits with the first and second operating frequencies is comprised of serially coupled plural-stage circuits;
• the plural-stage circuits include a first-stage circuit and a final-stage circuit;
• the first-stage circuits of the power amplification circuits with the first and second frequencies and the control circuit are formed in the first semiconductor chip;
• the final-stage circuit of the power amplification circuits with the first frequency is formed in the second semiconductor chip;
• the final-stage circuit of the power amplification circuits with the second frequency is formed in the third semiconductor chip;
• and
• the second and third semiconductor chips are larger in an amount of heat generated than the first semiconductor chip.