Hard bias structure with antiparallel layers
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Singh Gill
Life of this patent
Estimating the term…
Abstract
A magnetic head having a sensor with a free layer, the free layer having a magnetic moment. Hard bias structures are positioned towards opposite ends of the sensor, the hard bias structures stabilizing the magnetic moment of the free layer. Each hard bias structure includes an antiparallel (AP) pinned layer structure and an antiferromagnetic layer positioned towards each of the AP pinned layer structures. Each AP pinned layer structure has a middle pinned layer aligned along a plane of the free layer of the sensor, and outer pinned layers positioned on opposite sides of the middle pinned layer. Each antiferromagnetic layer stabilizes a magnetic moment of the pinned layer closest thereto.
Claims19
A magnetic head, comprising:
- a sensor having a free layer, the free layer having a magnetic moment;
- and
- hard bias structures positioned towards opposite ends of the sensor, the hard bias structures stabilizing the magnetic moment of the free layer, each hard bias structure comprising;
- an antiparallel (AP) pinned layer structure, the AP pinned layer structure having a middle pinned layer aligned along a plane of the free layer of the sensor, and outer pinned layers positioned on opposite sides of the middle pinned layer;
- and
- an antiferromagnetic layer positioned towards each of the AP pinned layer structures, each antiferromagnetic layer stabilizing a magnetic moment of the pinned layer closest thereto.
A magnetic head, comprising:
- a sensor having a free layer, the free layer having a magnetic moment;
- and
- hard bias structures positioned towards opposite ends of the sensor, the hard bias structures stabilizing the magnetic moment of the free layer, each hard bias structure comprising;
- an antiparallel (AP) pinned layer structure, the AP pinned layer structure having a first pinned layer aligned along a plane of the free layer of the sensor, and at least a second pinned layer for pinning a magnetic orientation of the first pinned layer;
- and
- an antiferromagnetic layer positioned towards each of the AP pinned layer structures, each antiferromagnetic layer stabilizing a magnetic moment of the pinned layer closest thereto.
A magnetic head, comprising:
- a sensor having a free layer, the free layer having a magnetic moment;
- and
- hard bias structures positioned towards opposite ends of the sensor, the hard bias structures stabilizing the magnetic moment of the free layer, each hard bias structure comprising;
- an antiparallel (AP) pinned layer structure, the AP pinned layer structure having a first pinned layer aligned along a plane of the free layer of the sensor, and at least a second pinned layer for pinning a magnetic orientation of the first pinned layer;
- wherein each AP pinned layer structure includes a middle pinned layer aligned along a plane of the free layer of the sensor, and outer pinned layers positioned on opposite sides of the middle pinned layer.
A magnetic head, comprising:
- a sensor having a free layer, the free layer having a magnetic moment;
- and
- hard bias structures positioned towards opposite ends of the sensor, the hard bias structures stabilizing the magnetic moment of the free layer, each hard bias structure comprising;
- an antiparallel (AP) pinned layer structure, the AP pinned layer structure having a first pinned layer aligned along a plane of the free layer of the sensor, and at least a second pinned layer for pinning a magnetic orientation of the first pinned layer;
- wherein a thickness of the first pinned layer is at least twice as thick as the free layer of the sensor.
A magnetic head, comprising:
- a sensor having a free layer, the free layer having a magnetic moment;
- and
- hard bias structures positioned towards opposite ends of the sensor, the hard bias structures stabilizing the magnetic moment of the free layer, each hard bias structure comprising;
- an antiparallel (AP) pinned layer structure, the AP pinned layer structure having a first pinned layer aligned along a plane of the free layer of the sensor, and at least a second pinned layer for pinning a magnetic orientation of the first pinned layer,
- wherein a thickness of the first pinned layer is at least as thick as the free layer of the sensor.
Dependencies are inferred from the claim text.