US 7,023,500 B2 · Display device with active-matrix transistor having silicon film modified by selective laser irradiation

Abstract

An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.

Claims4

Dependent claims

An active-matrix display device comprising an active-matrix substrate having a modified region formed by applying laser beams selectively to a silicon film formed on an insulating board, and having active circuits, including pixel circuits, formed in the modified region,

a pitch of the pixel circuits formed in a display region of the active-matrix substrate, which display region is in the modified region, being substantially twice a pitch of pixels;
and
the pixel circuit pitch being substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active-matrix substrate.

Dependencies are inferred from the claim text.

Facts

Application

10/345,261Filed 16 Jan 2003

Priority

JP 2002-1641345 Jun 2002

Published

US 2003/0227038 A111 Dec 2003

Granted

4 Apr 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10P 14/3814
Using laser beams: continuous wave laser beam
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon

Display device with active-matrix transistor having silicon film modified by selective laser irradiation

Life of this patent

Display device with active-matrix transistor having silicon film modified by selective laser irradiation

Life of this patent

Abstract

Claims4