Nonlinear resistor circuit using floating gate MOSFETs
AssigneeJapan Science and Technology Agency
InventorsYoshihiko Horio, Tetsuya Fujiwara, Kazuyuki Aihara
Life of this patent
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Abstract
An N-shaped nonlinear resistor circuit using floating gate MOSFETs; to realize various N-shaped characteristics that can be approximated by piecewise linear functions of third to seventh orders and further to realize N-shaped V-I characteristics that can variously change those characteristics by use of external voltages. A Λ-type nonlinear resistor circuit (1) and a V-type nonlinear resistor circuit (2) using multi-input floating gate MOSFETs are connected in parallel, and the currents of the Λ-type and V-type nonlinear resistor circuits are added together, thereby providing various N-shaped voltage-current characteristics.
Claims11
A nonlinear resistor circuit using a floating gate MOSFETs, wherein a Λ-shaped nonlinear resistor circuit using a multi-input floating gate MOSFET and a V-shaped nonlinear resistor circuit using a multi-input floating gate MOSFET are connected in parallel therewith and current of said Λ-shaped nonlinear resistor circuit and current of said V-shaped nonlinear resistor circuit are added, thus to combine various N-shaped voltage-current characteristics, said N-shaped voltage-current characteristic is continuously changed, and the voltage-current characteristics approximate to piecewise linear characteristics of third to seventh orders are realized.
Dependencies are inferred from the claim text.