Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof

A method of measuring at least one electrical property of a semiconductor wafer, the method comprising the steps of:

• (a) providing an elastically deformable conductive contact formed from an electrically conductive coating overlaying an electrically conductive base material, wherein:
• the base material has a first work function;
• the coating has a second work function;
• and
• the coating has a thickness of an extent such that the conductive contact has a work function that is intermediate the first work function and the second work function;
• (b) forming a first electrical contact between the conductive contact and a dielectric layer overlaying a top surface of the semiconductor wafer;
• (c) forming a second electrical contact with the semiconductor wafer;
• (d) applying an electrical stimulus between the first electrical contact and the second electrical contact;
• (e) measuring a response of the combination of the dielectric layer and the semiconductor wafer to the electrical stimulus;
• and
• (f) determining from the response at least one electrical property of the dielectric layer, the semiconductor wafer or both.