Dynamic burn-in equipment

Dynamic burn-in equipment for conducting burn-in of semiconductor devices while burn-in-signals are input to the semiconductor devices and the semiconductor devices are accommodated in a burn-in chamber, the equipment comprising:

• a measuring unit measuring a surface temperature distribution of the semiconductor devices;
• a characteristics monitoring unit monitoring characteristics of the semiconductor devices to be tested;
• and
• a control unit controlling the burn-in equipment,
• wherein when a defective semiconductor device is found, the control unit makes the characteristics monitoring unit continuously access a defect address of the defective semiconductor device at which a defect has been found, and specifies a defective portion of the defective semiconductor device based on a particular surface temperature, due to the defective portion, in the surface temperature distribution, which is raised higher than that of a different portion of the defective semiconductor device, measured by the measuring unit.

A dynamic burn-in testing process for conducting burn-in of semiconductor devices while burn-in signals are input to the semiconductor devices accommodated in a burn-in chamber, comprising:

• measuring, by an infrared measuring unit, surface temperatures of certain semiconductor devices among the semiconductor devices;
• calculating an average internal temperature Tj of said certain semiconductor devices according to the sum of an average Ts of the measured surface temperatures and a temperature difference ΔTj, wherein ΔTj is a temperature difference between Tj and Ts that is obtained from the expression “(power source voltage)×(power source current)×(thermal resistance value of the semiconductor devices)”;
• and
• controlling the temperature inside the burn-in chamber to make Tj equal to a predetermined value.

A dynamic burn-in testing process for conducting burn-in of semiconductor devices while burn-in signals are input to the semiconductor devices accommodated in a burn-in chamber, comprising:

• measuring a surface temperature distribution of the semiconductor devices;
• monitoring characteristics of the semiconductor devices to find a defective semiconductor device;
• continuously accessing a defect address of said found defective semiconductor device;
• and
• specifying a defective portion of said found defective semiconductor device based on a particular surface temperature, due to the defective portion, in said surface temperature distribution, which is raised higher than that of a different portion of said found defective semiconductor device.

An apparatus comprising:

• means for measuring surface temperatures of semiconductor devices in a burn-in chamber while burn-in signals are input to the semiconductor devices;
• and
• means for controlling temperature inside the burn-in chamber to make an average internal temperature Tj of the semiconductor devices equal to a predetermined value, where Tj is calculated according to the sum of an average surface temperature Ts and a temperature difference ΔTj, where
• Ts is an average of the measured surface temperatures, and
• ΔTj is a temperature difference between Tj and Ts that is obtained from the expression “(power source voltage)×(power source current)×(thermal resistance value of the semiconductor devices)”.

An apparatus comprising:

• means for measuring a surface temperature distribution of semiconductor devices in a burn-in chamber while burn-in signals are input to the semiconductor devices;
• means for monitoring characteristics of the semiconductor devices to find a defective semiconductor device;
• means for continuously accessing a defect address of said found defective semiconductor device;
• and
• mean for specifying a defective portion of said found defective semiconductor device based on a particular surface temperature, due to the defective portion, in the measured surface temperature distribution, which is raised higher than that of a different portion of said found defective semiconductor device.