Electron impact ion source

Abstract

An ion source configured for integration into both existing ion implanters used in semiconductor manufacturing and emerging ion implantation platforms. The ion source in accordance with the present invention includes the following features, all of which depart from the prior art to produce a well-focused, collimated and controllable ion beam. These features include: ionizing electron beams generated external to the ionization chamber, thereby extending the emitter lifetime; 90 degree magnetic deflection of electron beams such that no line-of-sight exists between the emitter and the process gas load, and the emitter is protected from bombardment by energetic charged particles; two opposed electron beams which can be operated simultaneously or separately; and use of a deceleration lens to adjust the final energy of the electron beam, substantially without affecting electron beam generation and deflection.

Dependencies are inferred from the claim text.