Low temperature packaging apparatus and method
AssigneeIntel Corporation
InventorDaoqiang Lu
Life of this patent
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Abstract
Some embodiments disclose a low temperature semiconductor packaging apparatus and method. An apparatus generally comprises a heat spreader, a silicon die, and a thermal interface material disposed between the heat spreader and the silicon die comprising a plurality of metals capable of forming a transient liquid phase bond. A method generally comprises attaching a silicon die to a substrate, depositing a thermal interface material on at least one of the silicon die and a heat spreader, and attaching the heat spreader to the silicon die, wherein the thermal interface material comprises a plurality of metals capable of forming a transient liquid phase bond. Other embodiments are also described and claimed.
Claims35
An apparatus comprising:
- a hear spreader;
- a silicon die;
- and
- a thermal interface material (TIM) disposed between the heat spreader and the silicon die comprising a plurality of metals capable of forming a transient liquid phase bond, wherein a first TIM metal is at least partially diffused within a second TIM metal.
A process comprising:
- attaching a silicon die to a substrate;
- depositing a thermal interface material on at least one of the silicon die and a heat spreader;
- and
- attaching the heat spreader to the silicon die at a handing temperature, wherein the thermal interface material comprises a plurality of metals capable of forming a transient liquid phase bond, and wherein the bonding temperature is less than the melting temperature of the metals.
An apparatus comprising:
- a heat spreader;
- a substrate;
- a silicon die attached to the substrate;
- and
- a bonding material that bonds the heat spreader to the silicon die, wherein the bonding material comprises metals capable of forming a transient liquid phase bond, wherein the bonding material has a melting temperature that is lower than the melting point of the metals.
A process comprising:
- depositing a first metal on a silicon die and a heat spreader;
- depositing a second metal on the first metal;
- attaching the silicon die to a substrate;
- and
- bonding the heat spreader to the silicon die, wherein the first and second metals form a transient liquid phase bond when heated for a predetermined time at a predetermined bonding temperature, wherein the bonding temperature is less than the melting temperature of the first and second metals.
A system comprising:
- a processor comprising a heat spreader, a silicon die, and a thermal interface material disposed between the heat spreader and the silicon die comprising a plurality of metals capable of forming a transient liquid phase bond, wherein at least one of the plurality of metals in the thermal interface material is diffused within another metal;
- and
- a parallel data bus coupling the processor to at least one input/output device.
Dependencies are inferred from the claim text.