Back to results
US 7,023,055 B2Granted
CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding
AssigneeInternational Business Machines Corporation
InventorsMeikei Ieong, Alexander Reznicek, Min Yang
Life of this patent
Estimating the term…
Abstract
A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive interface is provided. Also provided are the hybrid substrate produced by the method as well as using the direct bonding method to provide an integrated semiconductor structure in which various CMOS devices are built upon a surface orientation that enhances device performance.
Claims18
A hybrid substrate comprising:
- a first semiconductor layer having a first crystallographic orientation;
- and
- a second semiconductor layer having a second crystallographic orientation which is different from the first crystallographic orientation, wherein said first and second semiconductor layers are separated from each other by a conductive interface that has an upper surface that is in contact with said second semiconductor layer and a lower surface that is in contact with said first semiconductor layer, said conductive interface comprises a hydrophilic surface or a hydrophobic surface of at least one of said semiconductor layers.
An integrated semiconductor structure comprising:
- a hybrid structure comprising a first device region having a first crystallographic orientation and a second device region having a second crystallographic orientation, said first crystallographic orientation is different from said second crystallographic orientation, and wherein said hybrid structure comprises a hybrid substrate that comprises a first semiconductor layer having said first crystallographic orientation and a second semiconductor layer having said second crystallographic orientation, said first and second semiconductor layers are separated from each other by a conductive interface;
- an isolation region separating said first device region from said second device region;
- and
- at least one first semiconductor device located in said first device region and at least one second semiconductor device located in said second device region, wherein said first semiconductor device and said second semiconductor device are both bulk-like devices and both devices contain a well region that serves as a body contact.
1 more element
Dependencies are inferred from the claim text.