US 7,023,050 B2 · Super junction / resurf LDMOST (SJR-LDMOST)

Abstract

A lateral double diffused MOSFET (LDMOST) incorporates both the reduced surface field (RESURF) and super junction (SJ) in a split-drift region to significantly improve the on-state, off-state and switching characteristics in junction-isolated (JI) technology. The structure effectively suppresses substrate-assisted-depletion which is the main problem encountered when applying the SJ concept to lateral power devices. The device structure features a split-drift region formed of two parts: a SJ structure that extends over most of the drift region, and a terminating RESURF region occupying a portion of the drift region next to the drain. The structure offers improved breakdown voltage and reduced specific on resistance as compared to convention structures, and is useful in power integrated circuits suitable for a variety of applications including flat plasma panel display, automotive electronics, motor control, power supply and high voltage lamp ballasts.

Claims11

Dependent claims

A lateral double-diffused MOSFET semiconductor device comprising:

a substrate;
an epitaxial layer formed on the substrate;
a well region formed in the epitaxial layer;
a source region formed in the well region;
a drain region formed in the epitaxial region;
a gate region located above at least a portion of the well region;
and
a split drift region in the epitaxial layer and comprised of a super-junction region and a RESURF region, located between the source region and the drain region,
wherein the RESURF region is positioned between the super-junction region and the drain region.

6 more elements

Dependencies are inferred from the claim text.

Super junction / resurf LDMOST (SJR-LDMOST)

Life of this patent

Super junction / resurf LDMOST (SJR-LDMOST)

Life of this patent

Abstract

Claims11