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US 7,023,049 B2Granted
Semiconductor device including nonvolatile memory
AssigneeKabushiki Kaisha Toshiba
InventorsMasataka Takebuchi, Fumitaka Arai
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Abstract
A semiconductor device including a nonvolatile memory formed on a semiconductor substrate. According to the semiconductor device, a second gate electrode film is used for a gate electrode film of a logic circuit, and for a control gate electrode film of a nonvolatile memory. As the second gate electrode film is formed at a relatively later step in fabrication, subsequent thermal process may be avoided. The gate structure is suitable for miniaturization of the transistor in the logic circuit.
Claims9
A semiconductor device, comprising:
- a semiconductor substrate;
- a nonvolatile memory cell including a first MOS transistor having a first gate formed on the semiconductor substrate, the first gate being a layered gate structure having a first gate insulating film, a first gate electrode film, a second gate insulating film, a second gate electrode film, an ultra-thin insulating film having a thickness of less than approximately 3 nm, and a third gate electrode film, and a source and a drain formed in the substrate to interpose a surface region of the semiconductor substrate beneath the first gate;
- and
- a logic circuit including a plurality of second MOS transistors having a second gate formed on the semiconductor substrate, the second gate being a gate structure having a third gate insulating film, the second gate electrode film, the ultra-thin insulating film having a thickness of less than approximately 3 nm, and the third gate electrode film, and the source and the drain formed in the semiconductor substrate to interpose the surface region of the semiconductor substrate beneath the second gate.
1 more element
Dependencies are inferred from the claim text.