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US 7,023,046 B2Granted
Undoped oxide liner/BPSG for improved data retention
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Angela Hui, Ning Cheng, Jeyong Park, Jean Yee-Mei Yang, Robert A. Huertas, Tazrien Kamal, Pei-Yuan Gao, Tyagamohan Gottipati
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Abstract
Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 Å to 600 Å, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.
Claims3
A semiconductor device comprising:
- two gate electrode structures, spaced apart by a gap, on a semiconductor substrate;
- silicon oxide spacers on side surfaces of the gate electrode;
- an undoped oxide liner on the silicon oxide spacers in the gap;
- and
- a layer of subatmospheric-chemical vapor deposited (SA-CVD) boron (B) and phosphorous (P)-doped silicon oxide (BPSG) on the undoped oxide liner filling the gap, wherein the gate structures comprise:
- a tunnel oxide on the semiconductor substrate;
- a floating gate electrode on the tunnel oxide;
- an interpoly dielectric comprising an oxide/nitride/oxide (ONO) stack on the floating gate;
- and
- a control gate on the interpoly dielectric.
7 more elements
Dependencies are inferred from the claim text.