Trench capacitor vertical structure
AssigneeInternational Business Machines Corporation
InventorsGiuseppe La Rosa, Thomas W. Dyer, Oleg Gluschenkov, Jack A. Mandelman, Carl J. Radens, Alvin W. Strong
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Abstract
A versatile structure is formed, based on a deep trench, vertical transistor DRAM cell, that forms a conductive extension of the trench electrode in an elongated trench that contacts the lower electrode of the vertical transistor. The structure can be used as a capacitor, as a discrete transistor as a single-transistor amplifier or as a building block for more complex circuits.
Claims17
An integrated circuit containing a set of deep trenches in a semiconductor substrate, a first subset of which trenches have a first transverse dimension and a second subset of which trenches have an elongated transverse dimension greater than said first dimension and corresponding to said first dimension;
- a set of capacitors, having a center electrode, formed in said first and second subsets of deep trenches;
- a set of vertical transistors formed in said first subset and in at least some of said second subset and having a lower electrode connected to said center electrode;
- and an extension of said center electrode, extending above said lower transistor electrode of said vertical transistor and isolated from said vertical transistor to a surface contact at a vertical location at least at a substrate surface, in said at least some of said second subset, whereby a conductive path is established between said surface contact and a lower transistor electrode of said vertical transistors.
An integrated circuit containing a set of deep trenches in a semiconductor substrate, a first subset of which trenches have a first transverse dimension and a second subset of which trenches have an elongated transverse dimension greater than said first dimension and corresponding to said first dimension;
- a set of capacitors, having a center electrode, formed in said first and second subsets of deep trenches;
- a set of vertical transistors formed in said first subset and in at least some of said second subset and having a lower electrode connected to said center electrode;
- and
- an extension of said center electrode, extending above a lower transistor electrode of said vertical transistor and isolated from said vertical transistor to a surface contact at a vertical location at least at a substrate surface and connected to a circuit element other than said vertical transistor, in said at least some of said second subset, whereby a conductive path is established between said surface contact and a lower transistor electrode of said vertical transistors.
Dependencies are inferred from the claim text.