Misfet

A device comprising a drain, a source, channel, gate(s), and source, gate, and drain electrodes, wherein:

• the source is coupled to the channel at a source to channel interface, wherein a source to channel barrier height can be modulated by a field-effect, and a channel to drain barrier height is not affected by gate bias;
• the channel is coupled to the drain at a channel to drain interface;
• the source to channel interface differs from the channel to drain interface;
• and
• the electrostatic potential for electrons and holes is symmetric with respect to the mid-gap level, along a cut from source to drain, on a plane near an interface with a gate and on a plane far from an interface with a gate, when zero voltage is applied to the source, drain, and gate electrodes.

A device comprising a drain, a source, channel, and gate(s) wherein:

• the source is coupled to a channel at a source to channel interface, wherein a source to channel barrier height can be modulated by a field-effect, and a channel to drain barrier height is not affected by gate bias;
• the channel is coupled to the drain at a channel to drain interface;
• the source to channel interface differs from the channel to drain interface;
• and
• any cut along a line perpendicular to the plane of a gate, through the source layers, or through the channel layers, or the drain layers, exhibits a flat band condition along that line.