Light emitting device of III-V group compound semiconductor and fabrication method therefor

A light emitting device of a III–V group compound semiconductor comprising a first stack and a second stack, wherein

• said first stack includes a semiconductor stack having an n-type semiconductor layer, an active layer and a p-type semiconductor layer stacked successively,
• a multilayered reflecting-structure for reflecting light emitted from said active layer is formed on one main surface of said semiconductor stack,
• a first metal bonding-layer is formed on said multilayered reflecting-structure,
• a transparent electrode layer is formed on the other main surface of said semiconductor stack,
• said second stack includes a second metal bonding-layer,
• said first stack and said second stack are bonded together by bonding said first metal bonding-layer and said second metal bonding-layer to each other,
• said multilayered reflecting-structure includes a transparent conductive oxide layer and a reflecting metal layer adjacent thereto in this order from the said semiconductor stack, and
• a thickness of said transparent conductive oxide layer is adjusted in a range from 1 nm to 30 μm to control light emission characteristics on the transparent electrode layer side.