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US 7,023,025 B2Granted
Crystal growth method of nitride semiconductor
AssigneeLG.Electronics Inc.
InventorJohngeon Shin
Life of this patent
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Abstract
The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possible to improve electrical and crystalline characteristics.
Claims7
A nitride-semiconductor comprising:
- a metal oxide layer,
- a first nitride layer which includes said metal, formed on said metal oxide layer,
- a second nitride buffer layer formed over said first nitride buffer layer,
- a third nitride buffer layer which does not include said metal, said third nitride buffer layer being formed between said first nitride buffer layer and said second nitride buffer, and
- a nitride layer formed over said nitride buffer layers.
2 more elements
Dependencies are inferred from the claim text.