Diamond based blue/UV emission source
AssigneeInphot, Inc.
InventorsKrishna Linga, Ranjit Pandher
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Abstract
A diamond based Blue/UV light emitting source is disclosed. The source includes a diamond substrate having a first conductivity type, a first aluminum gallium nitride layer above the diamond substrate having the same conductivity type as the substrate, a bulk or a quantum well structure on the AlGaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second AlGaN layer on the quantum well or the bulk active layer having the opposite conductivity type as the first AlGaN layer, a contact structure on the second AlGaN layer having the opposite conductivity type from the substrate and the first AlGaN layer, an ohmic contact to the diamond substrate, and an ohmic contact to the contact structure.
Claims63
A light emitting diode comprising:
- (a) a diamond substrate;
- (b) a first aluminum gallium nitride layer above said diamond substrate having same conductivity type as said substrate;
- (c) a quantum well structure on said first aluminum gallium nitride layer formed of a plurality of repeating sets of alternating layers selected from the group consisting of GaN, InxGa1-xN, where 0<x<1, and AlxInyGa1-x-yN where 0<x<1 and 0<y<1 and 0<x+y<1;
- (d) a second aluminum gallium nitride layer on said quantum well structure having conductivity type opposite of said first aluminum gallium nitride layer;
- (e) a contact structure on said second aluminum gallium nitride layer having conductivity type opposite of said substrate and said first aluminum gallium nitride layer;
- (f) an ohmic contact to said diamond substrate;
- and
- (g) an ohmic contact to said contact structure.
A method of fabricating a light emitting diode, comprising the steps of:
- (a) growing a first aluminum gallium nitride layer on a diamond substrate having conductivity type of said substrate;
- (b) growing a quantum well structure of active layer on said first aluminum gallium nitride layer comprising a plurality of repeating sets (“periods”) of alternating layers selected from the group consisting of GaN, InxGa1-xN where 0<x<1, and AlxInyGa1-x-yN where x+y<1;
- (c) growing a second aluminum gallium nitride layer on said quantum well structure having conductivity type opposite of said first aluminum gallium nitride layer;
- (d) growing a contact structure on said second aluminum gallium niride layer having conductivity type opposite of said diamond substrate and forming an ohmic contact to said diamond substrate;
- and
- (e) forming an ohmic contact to said contact structure.
Dependencies are inferred from the claim text.