Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
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Abstract
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
Claims44
A semiconductor device comprising:
- a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween;
- a first insulating film formed on said semiconductor layer;
- at least one electrode formed on said first insulating film, and overlapping said channel formation region;
- a source wiring formed on said first insulating film;
- a second insulating film covering at least said at least one electrode and said source wiring;
- and
- a gate wiring formed over said second insulating film, and connected to said at least one electrode.
A semiconductor device comprising:
- a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween;
- a first insulating film formed on said semiconductor layer;
- at least one electrode formed on said first insulating film, and overlapping said channel formation region;
- a source wiring formed on said first insulating film;
- a second insulating film covering at least said at least one electrode and said source wiring;
- a gate wiring formed over said second insulating film, and connected to said at least one electrode;
- a connection electrode formed over said second insulating film, and connected to said source wiring and said semiconductor layer;
- and
- a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer.
A semiconductor device comprising:
- a semiconductor layer and at least one electrode including a gate electrode adjacent to said semiconductor layer with a first insulating film interposed therebetween;
- a source wiring formed on said first insulating film;
- a second insulating film covering at least said at least one electrode and said source wiring;
- a gate wiring formed over said second insulating film, and electrically connected to said at least one electrode;
- and
- a pixel electrode electrically connected to said semiconductor layer,
- wherein said pixel electrode is formed over said second insulating film.
A semiconductor device comprising a pair of substrates and a liquid crystal interposed therebetween, one of said pair of substrates having at least a pixel portion and a driver circuit, said pixel portion comprising:
- a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region and a channel formation region interposed therebetween;
- a first insulating film formed on said semiconductor layer;
- at least one electrode formed on said first insulating film, and overlapping at least said channel formation region;
- a source wiring formed on said first insulating film;
- a second insulating film covering at least said at least one electrode and said source wiring;
- a gate wiring formed over said second insulating film, and connected to said at least one electrode;
- a connection electrode formed over said second insulating film, and connected to said source wiring and said semiconductor layer;
- and
- a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer, and
- wherein the other one of said pair of substrates comprises a light-shielding film in which a red color filter and a blue color filter are laminated so as to overlap said semiconductor layer.
A semiconductor device comprising a pair of substrates and a liquid crystal interposed therebetween, one of said pair of substrates having at least a pixel portion and a driver circuit, said pixel portion comprising:
- a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region and a channel formation region interposed therebetween;
- a first insulating film formed on said semiconductor layer;
- at least one electrode formed on said first insulating film, and overlapping at least said channel formation region;
- a source wiring formed on said first insulating film;
- a second insulating film covering at least said at least one electrode and said source wiring;
- a gate wiring formed over said second insulating film, and connected to said at least one electrode;
- and
- a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer.
A semiconductor device comprising:
- a semiconductor layer formed over an insulating substrate;
- at least one electrode adjacent to said semiconductor layer with a first insulating film interposed therebetween;
- a source wiring formed on said first insulating film;
- a second insulating film covering at least said at least one electrode and said source wiring;
- and
- a gate wiring formed over said second insulating film, and electrically connected to said at least one electrode.
Dependencies are inferred from the claim text.