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US 7,023,020 B2Granted
Group III nitride compound semiconductor light-emitting device
AssigneeToyoda Gosei Co., Ltd.
InventorToshiya Uemura
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Abstract
A groove is formed in a semiconductor laminate portion containing a light-emitting layer so that the groove starts from a light emission observation surface of the semiconductor laminate portion to reach at least the light-emitting layer. In such a manner, light is released from an opening portion of the groove.
Claims14
A group III nitride compound semiconductor light-emitting device comprising:
- a semiconductor laminate portion including a light-emitting layer;
- and
- a groove formed in said semiconductor laminate portion so as to extend from a light emission observation surface of said semiconductor laminate portion to reach at least said light-emitting layer;
- and
- a p-type electrode and an n-type electrode formed in a same surface side of said semiconductor laminate portion,
- wherein said semiconductor laminate portion is partitioned into a plurality of blocks by said groove,
- wherein an auxiliary electrode is provided so as to extend from said p-type electrode such that a current from said p-type electrode is supplied to each of said plurality of blocks, and
- wherein an electrically insulating layer is formed between said auxiliary electrode and said semiconductor laminate portion.
5 more elements
A group III nitride compound semiconductor light-emitting device comprising:
- a semiconductor laminate portion including a light-emitting layer;
- a groove formed in said semiconductor laminate portion;
- and
- a p-type electrode and an n-type electrode formed in a same surface side of said semiconductor laminate portion,
- wherein said groove extends from an opening in a light emission observation surface of said semiconductor laminate portion into said semiconductor laminate portion to reach at least said light-emitting layer,
- wherein said groove reveals a side surface of said light-emitting layer,
- wherein said semiconductor laminate portion is partitioned into a plurality of blocks by said groove,
- wherein an auxiliary electrode is provided so as to extend from said p-type electrode such that a current from said p-type electrode is supplied to each of said plurality of blocks, and
- wherein an electrically insulating layer is formed between said auxiliary electrode and said semiconductor laminate portion.
6 more elements
Dependencies are inferred from the claim text.