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US 7,023,015 B2Granted
Thin-film semiconductor device and liquid crystal display
AssigneeNEC Corporation
InventorsNaoki Matsunaga, Kenji Sera, Mitsuasa Takahashi
Life of this patent
Estimating the term…
Abstract
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1 MV/cm to 2 MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm3 to 1E+20/cm3.
Claims9
A thin-film semiconductor device comprising:
- a first plurality of thin-film transistors having different driving voltages than a second plurality of thin-film transistors, wherein said first and second plurality of transistors are formed on a glass substrate,
- wherein an electric field of a gate insulated at each of said driving voltages of said first and second plurality of thin-film transistors is in a range of about 1 MV/cm to 2 MV/cm, and a drain concentration of P-type thin-film transistors is in a range of about 3E+19/cm3 to 1E+20/cm3.
A thin-film semiconductor device comprising:
- a first plurality of thin-film transistors having different driving voltages than a second plurality of thin-film transistors, wherein said first and second plurality of transistors are formed on a glass substrate,
- wherein an electric field of a gate insulator at each of said driving voltages of said first and second plurality of thin-film transistors is in a range of about 0.2 MV/cm to 0.8 MV/cm, and a drain concentration of P-type thin-film transistors is in a range of about 3E+19/cm3 to 1E+20/cm3.
Dependencies are inferred from the claim text.