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US 7,023,011 B2Granted
Devices with optical gain in silicon
AssigneeTranslucent, Inc.
InventorsPetar B. Atanackovic, Larry R. Marshall
Life of this patent
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Abstract
A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
Claims4
A layered structure device, comprising:
- a silicon based superlattice with a plurality of layers that form a plurality of repeating units, at least one of the layers being an active region layer with at least one rare earth ion, wherein at least a portion of the superlattice is made of substantially a Group III–V or II–VI material.
A structure for efficient excitation or de-excitation mechanisms of crystal field engineered rare-earth silicon-based superlattice, comprising:
- a silicon semiconductor based superlattice that includes a plurality of layers that form a plurality of repeating units, at least one of the layers being an optically active layer with at least one species of rare earth ion;
- a first layer of semiconductor material, and
- a second layer of semiconductor material, wherein the superlattice is sandwiched between the first and second layers and the first and second layers each have a wider bandgap than the superlattice.
A silicon semiconductor based superlattice, comprising:
- a silicon based superlattice with a plurality of layers that form a plurality of repeating units, at least one of the layers being an active region layer with at least one rare earth ion, at least a portion of the superlattice being made of substantially a Group III–V or II–VI material, wherein at least a portion of the plurality of layers are interleaved with a plurality of quantum wells.
Dependencies are inferred from the claim text.